The 2STF1550 and 2STN1550 are NPN transistors manufactured using new “PB-HCD” (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Figure 1. Internal schematic diagram SOT-89 1 2 4 3 SOT-223 4 3 2 1 Table 1. Device summary
2N3904 : NPN switching transistor NXP Semiconductors. Your require pages is cannot open by blow Reason : Connect this pages through directly deep link alldatasheet.com is Free datasheet search site. You can use All semiconductor datasheet in Alldatasheet, by No Fee and No register. If you have any questions about using to our site,... The TIP122 belongs to a sort of npn epitaxial darlington transistor, designed for general purpose amplifier and low speed switching applications. TIP122 transistor can switch loads upto 60V with a peak current of 8A and continuous current of 5A. It is suitable for medium and high power electronics like controlling motors, solenoids or high ... TRANSISTOR Datasheets, Datasheet(PDF) - Toshiba Semiconductor - RN1544 Datasheet, Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor), Rohm - DTA143ZU3HZG Datasheet, Toshiba Semiconductor - RN4901FE Datasheet
The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. Transistor NPN S8050 LOW VOLTAGE HIGH CURRENT SMALL SIGNAL ... Transistor NPN BD135 Medium Power Linear and Switching ... Datasheet: Foto del transistor (contenitore ... Datasheet www.rohm.com ... 2SD1898 / 2SD1733. NPN 1.0A 80V Middle Power Transistor. l. Outline. l. Features. 1) Suitable for Middle Power Driver. 2) Complementary PNP ... High-Voltage Fast-Switching NPN Power Transistor Features • High-Voltage Capability • High Switching Speed Applications • Electronic Ballast • Switching Regulator • Motor Control • Switched Mode Power Supply Ordering Information Notes: 1. The affix “-H2” means the hFE classification. The suffix “-TU” means the tube packing ... Foshan Blue Rocket Elec Foshan Blue Rocket Elec 2N3906 US$0.01 LCSC electronic components online Transistors Transistors (NPN/PNP) leaded datasheet+inventory and pricing
BUV48AFI High Power NPN Silicon Transistors . STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED. APPLICATIONS s SWITCH MODE POWER SUPPLIES s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS.
Complementary Silicon High Power Transistor NPN 2N3055A 2N3055A Characteristics / Parameters Transistor NPN High Power Bipolar Device in an Hermetically sealed TO3 Metal Package.
Description: T-NPN,PWR AMP,HI SP SW QTY Per Package: 1 QTY In Stock: 1 There is a 1-2 week lead-time for out of stock items. Click here for the datasheet for NTE36. If this datasheet link is broken, the datasheet may still be available at nteinc.com. High-Power NPN Silicon Transistors. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc 2N3904 : NPN switching transistor NXP Semiconductors. Your require pages is cannot open by blow Reason : Connect this pages through directly deep link alldatasheet.com is Free datasheet search site. You can use All semiconductor datasheet in Alldatasheet, by No Fee and No register. If you have any questions about using to our site,... NPN 30 A Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for NPN 30 A Bipolar Transistors - BJT. NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/408 Devices Qualified Level 2N3715 2N3716 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3715 2N3716 Units Collector -Emitter Voltage V CEO 60 80 Vdc Collector -Base Voltage V CBO 80 100 Vdc Emitter -Base Voltage V EBO 7.0 Vdc Base Current IB 4.0 Adc
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity.